Microstructural, Corrosion, Photoelectrochemical properties of Al,Ti co-doped ZnO thin films prepared by sol-gel method

• Main Authors: Cheng-Hsueh Lee, 李承學
• Other Authors: Jing-Chie Lin
• Format: Others
• Language: zh-TW
• Published: 2016
• Online Access: http://ndltd.ncl.edu.tw/handle/44258734991262865890

碩士 === 國立中央大學 === 材料科學與工程研究所 === 104 === In this study, we prepared the Al, Ti codoped ZnO thin film on glass substrates for photoelectrochemical (PEC) water splitting by sol-gel method using spin-coating technique. Effect of dopant concentrations on the microstructural, morphological, optical and electrochemical properties of ZnO-based thin films are investigated. Result from X-ray diffraction patterns, all samples belonged to wurtzite ZnO phase with a c-axis preferred orientation. Through scanning electron microscope, average particle size in TAZO decreased with increasing dopant content. Average optical transmittance measured by UV-Vis spectrophotometer indicated 88% for AZO, 90% for TZO and 89% for TAZO. The resistivity was measured at 42 Ω cm for AZO doped with 1 at.% Al, at 47 Ω cm for TZO doped with 0.5at.% Ti, at 8.21Ω cm for T1.00A1.0ZO co-doped 1 at.% Al with 1 at.% Ti analyzed by four-point probe. Through electrochemical measurements, we found that the dopant concentration of Al, Ti plays an important role in TAZO that affected photocurrent density, stability of water splitting and anti-corrosion.