| Summary: | 碩士 === 國立交通大學 === 理學院應用科技學程 === 104 === Field-effect transistors (FET) biosensor have recently drawn tremendous attention to become a promising biosensor because of their ultrasensitivity, selectivity, and label-free capabilities. This study aimed for both optimization and stability modifying conditions of alumina chip in the extended gate field effect transistor (EG-FET). It can use the gas phase and liquid phase to modify amine group (-NH2 group) on the alumina chip. The vapor deposition, (3-Aminopropyl)trimethoxysilane (APTMS); the liquid immersion method, 2-aminoethylphosphonic acid (AEPA) and Dopamine is formed by self-assembly monolayers, in order to crosslink the biomolecules on the alumina chip. Modification was confirm by using X-ray photoelectron spectroscopy (XPS); fluorescence microscope and scanning electron microscope (SEM). Then immobilized an antibody and fluorescent antigen to confirm the feasibility of biometric systems. In this thesis, the use of APTMS to modify on the alumina chip can efficiently immobilize antibody and contribute to the development of highly sensitive and highly selective biological sensing element to provide a platform for rapid disease detection.
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