Practical Topology Application of Cascode GaN HEMTs in Power Electronics

• Main Authors: Tsai, Yun-Chen, 蔡昀辰
• Other Authors: Cheng, Stone
• Format: Others
• Language: zh-TW
• Published: 2015
• Online Access: http://ndltd.ncl.edu.tw/handle/79710017377930739090

碩士 === 國立交通大學 === 機械工程系所 === 104 === Normally-off GaN-based high-electron-mobility transistor (HEMT) have been developed with fast switching and low conduction losses. This study dedicated in applying normally-off GaN in conventional power electronic circuit topologies including high efficiency BLDC, and Micro Solar Inverter. Two different topologies: synchronous/nonsynchronous rectification, and ZVS full-bridge, are been investigated for GaN power device because of their fame of low Rds(on) and a superior reverse-recovery charge Qrr comparing to Si power MOSFET. Under 3x faster switching and 1.66x less power loss, GaN improved 2.73% efficiency than Si-based MOSFET with 250KHz switching frequency for boost converter topology.