Growth and Characteristics of Silicon Nitride on Gallium Nitride by Plasma-Assisted Molecular Beam Epitaxy
碩士 === 國立交通大學 === 電子物理系所 === 104 === In this dissertation, the gallium nitride and silicon nitride grown on c-plane sapphire substrate by plasma assisted molecular beam epitaxy (MBE) were studied. The photoluminescence (PL), scanning electron microscope (SEM) and X-ray photoelectron spectroscopy (XP...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/07294005973216839348 |