0.4V Configurable Near-Threshold TCAM Design in 28nm High-k Metal-Gate CMOS Process

碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 104 === Even though ternary content addressable (TCAM) is the power hungry circuitry, it still be extensively adopted in routing table of network systems by its high speed and unique. With the develop of the portable devices and the rise of Internet of Things (IoT)...

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Bibliographic Details
Main Authors: Chan, Yun-Sheng, 詹耘昇
Other Authors: Chuang, Ching-Te
Format: Others
Language:en_US
Published: 2016
Online Access:http://ndltd.ncl.edu.tw/handle/xt3595
Description
Summary:碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 104 === Even though ternary content addressable (TCAM) is the power hungry circuitry, it still be extensively adopted in routing table of network systems by its high speed and unique. With the develop of the portable devices and the rise of Internet of Things (IoT), the issue of energy efficiency and low supply voltage become a major trend in SoC. If we want to introduce TCAM into IoT. Its power hungry problem should be solved first. However, conventional 6T SRAM is hard to work in low supply voltage duo to read/write ability degradation which caused by severely process variation in advance process. We realize our design in umc 28nm high-k metal-gate (HKMG) CMOS technology. We introduce the 6T Mini-array into TCAM and let it can even operate at 0.4V. Additionally, we use hierarchical PRE, power gating and ripple search-line in our design which let total energy consumption less.