Various Aspects of the Process and Stress Induced Variabilities in Tri-gate Transistors

博士 === 國立交通大學 === 電子工程學系 電子研究所 === 104 === Theories, methodolgies, and applications of variabilities for CMOS devices have been elucidated, developed, and implemented. The variation of CMOS devices has been a significant issue as the devices are continuously scaled, in particular into the deep nano...

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Bibliographic Details
Main Authors: Hsieh, E-Ray, 謝易叡
Other Authors: Chung, Steve
Format: Others
Language:en_US
Published: 2016
Online Access:http://ndltd.ncl.edu.tw/handle/60588112197960099791

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