Various Aspects of the Process and Stress Induced Variabilities in Tri-gate Transistors
博士 === 國立交通大學 === 電子工程學系 電子研究所 === 104 === Theories, methodolgies, and applications of variabilities for CMOS devices have been elucidated, developed, and implemented. The variation of CMOS devices has been a significant issue as the devices are continuously scaled, in particular into the deep nano...
Main Authors: | Hsieh, E-Ray, 謝易叡 |
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Other Authors: | Chung, Steve |
Format: | Others |
Language: | en_US |
Published: |
2016
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Online Access: | http://ndltd.ncl.edu.tw/handle/60588112197960099791 |
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