Investigation of HfO2/Al2O3/In0.53Ga0.47As Gate Stack Fabricated on In0.53Ga0.47As-channel nMOSFETs
碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 104 === In the beginning of thesis, we successfully fabricated nickel indium gallium arsenide alloy by post metal annealing (PMA) at 250 °C in N2 ambient. Moreover, the sheet resistance of Ni-InGaAs was lower than InGaAs heavily doped with n-type. The Schottky barr...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2015
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/26304159462040169139 |