Investigation of non-magnetic semiconductor magnetoresistance devices
碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 104 === In this work, the Si- and InGaAs-based magnetoresistance (MR) devices have been extensively investigated at room temperature. For the two-terminal geometrical MR Si devices, the highest MR of 1.44 % at 1 T is obtained with the device of 6.66-um contact dist...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/99038106578494660444 |