| Summary: | 碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 104 === As the CMOS technology develops so fast, radio-frequency integrated circuits (RF ICs) has been widely implemented in CMOS process. It has the advantage of a high integration and a low cost. Electrostatic discharge (ESD) has been one of the most serious reliability issues of CMOS processes, so ESD protection design is very important. However, undesirable parasitic effect is induced by the ESD protection design in RFICs. Consequently a successful RF ESD protection design needs well ESD protection ability and small parasitic effect.
In this thesis, two RF ESD protection designs for T/R switch front-end circuit are proposed. The first one can reduce the parasitic effect and sustain ESD stress. The second one can sustain ESD stress without extra ESD protection device. Both ESD protection designs are applied to 2.4GHz T/R switch front-end circuit.
An RF ESD protection design for traditional T/R switch front-end circuit is also proposed in this thesis. The number of the ESD protection devices is reduced in this design. Besides, silicon-controlled rectifier (SCR) is embedded in T/R switch, and the detection circuit, which is used in power-rail ESD clamp circuit, can sent trigger signals to trigger the SCR. The embedded SCR and parasitic diode can provide ESD discharge paths. Moreover, this ESD protection designs are applied to 2.4GHz traditional T/R switch front-end circuit.
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