Two Key Factors in FETs Scaling:Long-Range Collective Coulomb Interactions and Ballistic Transport
碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 104 === Recently, owing to the scaling of transistors, electrons suffer more from complicated scattering mechanisms, thus resulting in mobility degradation. According to previous studies, when the channel length is reduced to the nanometer dimension, long-range col...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/4sm37n |