Two Key Factors in FETs Scaling:Long-Range Collective Coulomb Interactions and Ballistic Transport

• Main Authors: Tsai, Ming-Fu, 蔡明芙
• Other Authors: Chen, Ming-Jer
• Format: Others
• Language: en_US
• Published: 2015
• Online Access: http://ndltd.ncl.edu.tw/handle/4sm37n

碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 104 === Recently, owing to the scaling of transistors, electrons suffer more from complicated scattering mechanisms, thus resulting in mobility degradation. According to previous studies, when the channel length is reduced to the nanometer dimension, long-range collective Coulomb interactions between plasmons in high-doping region (source and drain) and electrons in the inversion-layer will be intrinsically degrade the inversion-layer electron mobility. In this thesis, we use both experiments and TCAD to investigate how source/drain plasmons penetrate into the channel, and establish its model via the plasmon resonance. Additionally, we consider another intrinsic factor, namely the ballistic transport. As a result, two critical channel lengths are created, which can serve as a guidelines to distinguish transport mechanisms for all lengths. When dealing with shorter channels, we can separate long-range Coulomb interactions from ballistic transport. Moreover, the effect of two-dimensional electron gas density is taken into account. These guidelines can help elucidate the observed decreasing trend of inversion-layer effective moility with the decreased channel length.