Numerical Simulation of Program/Erase/Retention in Planar and GAA SONOS with Different Dielectrics

碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 104 === In this thesis, we developed a complete and consistent program/erase/retention model which can evaluate the performance boosted by changing structure and dielectrics. According to our model, the program/erase window can be improved by using Gate-All-Around(...

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Bibliographic Details
Main Authors: Tsai, Te-Hung, 蔡德宏
Other Authors: Wang, Tahui
Format: Others
Language:en_US
Published: 2015
Online Access:http://ndltd.ncl.edu.tw/handle/2625k4

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