Magnetoelectro-Coupling Characteristics of PN Diode Structure Embedded with FePt Nano-magnets

• Main Authors: Tsai Ming-Chian, 蔡銘謙
• Other Authors: Chang, Chun-Yen
• Format: Others
• Language: en_US
• Published: 2015
• Online Access: http://ndltd.ncl.edu.tw/handle/46973983797323081902

碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 104 === “Diode” has so far been widely applied in the Very-large-scale integration (VLSI). What is more, the theorem and characteristics of its device also lay a solid foundation for the device of semiconductor. Nowadays, the feature size of semiconductor has been downsized, which makes the theories insufficient to explain both its effect and property. Therefore, we have to make a new attempt. Recently, there has been a lot of attention on magnetic material’s potential. FePt has been selected since it’s magnetocrystalline anisotropy and saturated magnetization is larger than other magnetic materials and chemical stability is better than others. Because of that, we embed FePt to PN diode and study its magneto-electric coupling effect on breakdown voltage and reverse saturated current. There are three parts of this thesis. First part is the fabrication of PN diode structures. By making the temperature of after implant annealing to be the variables, we try to find the basic reverse leakage current. In the second part we embed nano-magnet FePt to PN diode and investigates the electrical and magnetic characteristic effect of PN diode which is affected by FePt nano-magnets. We observed lower reverse leakage current and higher breakdown voltage of PN diode which embedded nano-magnet FePt. In the last part, we use magnetic annealing which is in a strong external magnetic field to find the optimal condition. According to theoretical predictions, the magnetic field can reduce leakage current and enhance the breakdown voltage. And magnetic annealing process can enhance remanent magnetization and saturated magnetization of devices. So we use magnetic annealing process to increase saturated magnetization and we will get better electrical characteristics.