| Summary: | 碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 104 === In recent days, the integrated circuits manufacturing in semiconductor technology is well development and mature. Using the complementary metal oxide semiconductor (CMOS) to replace the traditional III-V compound process in microwave and MM-wave circuits is the trend in nowadays. However, there is still a lot of improvement for using the CMOS processes. The Si substrate has great loss in the high frequency operation. It is a big defect for RF applications. Both achieving low noise application and designing the high quality passive elements are two of our goals. Therefore, we research on the Q-band broadband mixer and amplifier for how to design and implement these performances. This thesis will present the design techniques and methods of the receiver sub-circuits operating in Q-band by using CMOS advanced technology.
This circuit is designed by using TSMC 90nm CMOS process for the future development of Q-band transceiver. The system will be applied in the Q-band millimeter-wave telescope transceiver. There is a tripler in LO chain to provide the third order harmonic signals with 11-17GHz input signals. In addition, the power amplifier in LO chain can be a LO signal source to drive the Q-band mixer with enough output power for the wireless communication. The LO chain will integrated with LNA, mixer and IF amplifier to a compact IC.
|
|---|
