Study of the T-shaped Gate Head Dimension Influence for 90nm InAs HEMTs on InP Substrate Using E-beam Lithography
碩士 === 國立交通大學 === 照明與能源光電研究所 === 104 === Due to the high electron mobility and superior band gap design, InAs HEMT has substituted Si to achieve high speed, high frequency and low power consuming performance. Furthermore, with the design of bounded channel, we enhance the percentage of the Indium co...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/5vu399 |