Study of DC and RF Characteristic Improvements on GaN HEMTs by LPCVD Grown Silicon Nitride Passivation

Study of DC and RF Characteristic Improvements on GaN HEMTs by LPCVD Grown Silicon Nitride Passivation

碩士 === 國立交通大學 === 材料科學與工程學系所 === 104

Bibliographic Details
Main Authors:	Kao, Chung-Chun, 高仲均
Other Authors:	Chang, Edward-Yi
Format:	Others
Language:	en_US
Published:	2015
Online Access:	http://ndltd.ncl.edu.tw/handle/49128498332976388064

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