Study of DC and RF Characteristic Improvements on GaN HEMTs by LPCVD Grown Silicon Nitride Passivation

Study of DC and RF Characteristic Improvements on GaN HEMTs by LPCVD Grown Silicon Nitride Passivation

碩士 === 國立交通大學 === 材料科學與工程學系所 === 104

Bibliographic Details
Main Authors: Kao, Chung-Chun, 高仲均
Other Authors: Chang, Edward-Yi
Format: Others
Language:en_US
Published: 2015
Online Access:http://ndltd.ncl.edu.tw/handle/49128498332976388064
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spelling ndltd-TW-104NCTU51590572017-09-06T04:22:12Z http://ndltd.ncl.edu.tw/handle/49128498332976388064 Study of DC and RF Characteristic Improvements on GaN HEMTs by LPCVD Grown Silicon Nitride Passivation 藉低壓化學氣相沉積成長氮化矽鈍化層改善氮化鎵高電子遷移率電晶體直流與高頻特性之研究 Kao, Chung-Chun 高仲均 碩士 國立交通大學 材料科學與工程學系所 104 Chang, Edward-Yi 張翼 2015 學位論文 ; thesis 68 en_US
collection NDLTD
language en_US
format Others
sources NDLTD
description 碩士 === 國立交通大學 === 材料科學與工程學系所 === 104
author2 Chang, Edward-Yi
author_facet Chang, Edward-Yi
Kao, Chung-Chun
高仲均
author Kao, Chung-Chun
高仲均
spellingShingle Kao, Chung-Chun
高仲均
Study of DC and RF Characteristic Improvements on GaN HEMTs by LPCVD Grown Silicon Nitride Passivation
author_sort Kao, Chung-Chun
title Study of DC and RF Characteristic Improvements on GaN HEMTs by LPCVD Grown Silicon Nitride Passivation
title_short Study of DC and RF Characteristic Improvements on GaN HEMTs by LPCVD Grown Silicon Nitride Passivation
title_full Study of DC and RF Characteristic Improvements on GaN HEMTs by LPCVD Grown Silicon Nitride Passivation
title_fullStr Study of DC and RF Characteristic Improvements on GaN HEMTs by LPCVD Grown Silicon Nitride Passivation
title_full_unstemmed Study of DC and RF Characteristic Improvements on GaN HEMTs by LPCVD Grown Silicon Nitride Passivation
title_sort study of dc and rf characteristic improvements on gan hemts by lpcvd grown silicon nitride passivation
publishDate 2015
url http://ndltd.ncl.edu.tw/handle/49128498332976388064
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