Flip-Chip Packaging Design for Performance Enhancement of AlGaN/GaN High-Electron-Mobility Transistors

博士 === 國立交通大學 === 材料科學與工程學系所 === 104 === GaN-based high-electron mobility transistors (HEMTs) are recognized as one of the promising candidates for applications in power electronics since they are capable of operating at high voltages and high temperatures and delivering high output currents. Hence,...

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Bibliographic Details
Main Authors: Tsai, Szu-Ping, 蔡思屏
Other Authors: 張翼
Format: Others
Language:en_US
Published: 2016
Online Access:http://ndltd.ncl.edu.tw/handle/33662m

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