Fabrication and Characterization of GaN-based Semiconductor Devices on Si Substrates for High-Power Electronic Applications
博士 === 國立交通大學 === 材料科學與工程學系所 === 104 === The integration of GaN-based High Electron Mobility Transistors (HEMTs) and a large diameter Si substrate are promising candidates for next-generation high power device applications owing to the high current, high breakdown, and low fabrication cost. This the...
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| Format: | Others |
| Language: | en_US |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/17580540732119249671 |