Study on IGZO Thin Film Transistors with Finlike Channels Fabricated by Nanoimprint Lithography

• Main Authors: KE, JIA-SHENG, 柯佳昇
• Other Authors: CHEN, JIANN-HENG
• Format: Others
• Language: zh-TW
• Published: 2017
• Online Access: http://ndltd.ncl.edu.tw/handle/mykac7

碩士 === 國立暨南國際大學 === 電機工程學系 === 105 === The research can divided by two parts, the first part is the experiment of sputtering, and the second one is about the nanoimprint lithography. As the result of first sputter deposition, the IGZO shows better performance in oxygen flow 5%, higher mobility and lower sub-threshold swing. Therefore, the measurement result of TLM (Transfer Length Method) indicated that IGZO had lower sheet resistance in oxygen flow 5%. Furthermore, when the thin film (IGZO) was resputter, the device with IGZO in oxygen flow 0%, post-annealed at 280℃, shows better pergormance. In otherwords, the device anneal at higher temperature, shows characteristic, such as sub-threshold swing. With finlike channel structure, the characteristics of IGZO TFTs, such as drain current and mobility can be improved, comparing to the conventional one. This approach may be suitable for the future display applications.