Memory and electrical effects in organic n-type memory transistors with pn heterojunctions
碩士 === 國立成功大學 === 光電科學與工程學系 === 104 === The relationship between the thickness of pentacene in p-n heterojuntions and the electrical performance of non-volatile organic transistor memories (NVOTMs) was investigated in this study. The pentacene layer was deposited onto a 2.5 nm-thick PTCDI–C13H27 fil...
Main Authors: | Po-KangHuang, 黃柏綱 |
---|---|
Other Authors: | Wei-Yang Chou |
Format: | Others |
Language: | zh-TW |
Published: |
2016
|
Online Access: | http://ndltd.ncl.edu.tw/handle/14050039273469963372 |
Similar Items
-
Electrical Characterization of Si/ZnO Nanorod PN Heterojunction Diode
by: Sadia Muniza Faraz, et al.
Published: (2020-01-01) -
Heterojunction Gated-PN iTFET
by: Hong-Jian Jheng, et al.
Published: (2019) -
Study of new type spin transistors based on silicon pn junction
by: Ying-Wen Huang, et al.
Published: (2006) -
Fabrication and Electrical Characteristics of Organic Semiconductors for Transistor-type Memory and Stretchable Electronic Devices
by: Chien-Chung Shih, et al.
Published: (2016) -
Electrical properties and memory effects in self-oxidized MoOx/MoS2 transistor
by: Wang, Po-Sheng, et al.
Published: (2017)