| Summary: | 碩士 === 國立成功大學 === 光電科學與工程學系 === 104 === In this paper, the use of Ni/Au film after annealing, as a hole transport layer and a transparent metal electrode, and spin-coated on this film in a perovskite (CH3NH3PbBr3), light-emitting-diode element using a layer of Ni/Au film to simplify processes, extend component , the greater the possibility of brightness.
According to previous studies, Ni/Au (100Å/70Å) after 500°C through oxygen annealing have a higher penetration and a low sheet resistance value, we compared the generally ITO and NiOx as a substrate perovskites light-emitting diode, for an active layer perovskite covered using a second solvent method, in order to improve the perovskite film quality again, the use of MA gas for surface modification, the perovskite layer has a more uniform and more dense surface, after completion of element, will be higher brightness and lower luminous turn on voltage.
We discussed the state of the perovskite film, the relationship between the grain size and saturation, and perovskite crystal phase, the relationship of film quality and brightness , and finally discuss the hydrophilic that perovskite to differences substrate, speculation its possible effect .
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