| Summary: | 碩士 === 國立成功大學 === 光電科學與工程學系 === 104 === The spintronics behaviors are the critical element to affect the physical properties of organic semiconductors. In this study, we design a new organic semiconductor with magnetic properties by using co-evaporation method. Then, we investigate the magnetization effects within different magnetic field directions for Ni:pentacene-based transistors. The active layer of transistors is fabricated by electron beam evaporation system. There are three different concentrations of Ni atoms which doped into a pentacene film as the active layer of transistors.
The interface states at the interface between semiconductor and insulator layer and subthreshold swing of transistors were not remarkably affected by the Ni-doping effect. However, when the intensity of Ni atoms increased within the pentacene film, the bulk defects increased mightily.
The field-effect carrier mobility of pentacene-based transistor without Ni-doping isn’t affected by applying an external magnetic field. On the other hand, the carrier mobility of Ni:pentacene-based transistor is remarkably increased by applying an external magnetic field. This significant change occurs when the direction of applied magnetic field is parallel to the conducting channel. The above results show that the Ni atoms can provide spontaneous magnetic moments and cause the good electron-spin coupling to achieve high efficiency charge transport in pentacene film.
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