Barium Zirconate Titanate Insulators for Organic Nonvolatile Memory Applications

碩士 === 國立成功大學 === 微電子工程研究所 === 104 === In this thesis, we prepared a solution-processed high-κ barium zirconate titanate as a gate dielectric for pentacene-based organic thin film transistor applications. The performance of the transistor showed a high field-effect mobility of 7.31 cm2/V·s. Furtherm...

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Main Authors: Ying-WeiTseng, 曾穎偉
Other Authors: Yeong-Her Wang
Format: Others
Language:en_US
Published: 2016
Online Access:http://ndltd.ncl.edu.tw/handle/20093055496102383956
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spelling ndltd-TW-104NCKU54280462017-10-01T04:30:09Z http://ndltd.ncl.edu.tw/handle/20093055496102383956 Barium Zirconate Titanate Insulators for Organic Nonvolatile Memory Applications 以鋯鈦酸鋇絕緣層研製有機非揮發性記憶體 Ying-WeiTseng 曾穎偉 碩士 國立成功大學 微電子工程研究所 104 In this thesis, we prepared a solution-processed high-κ barium zirconate titanate as a gate dielectric for pentacene-based organic thin film transistor applications. The performance of the transistor showed a high field-effect mobility of 7.31 cm2/V·s. Furthermore, we utilized Al and spontaneously oxidized Al2O3 as the floating gate and the tunneling layer, respectively. The charge and discharge effects with different gate voltages were discussed by Vt shift. By combining the advantages of high-κ dielectric and floating gate structure, the device effectively reduced the operation voltage and showed good performance of nonvolatile memory characteristic, with a low operation voltage of ±10 V, a large memory window of 4.5 V, and a long retention time of 103 s. We also analyzed mechanism injection by gate current fitting to understand the carrier injection mechanism through the oxide. Yeong-Her Wang 王永和 2016 學位論文 ; thesis 91 en_US
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language en_US
format Others
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description 碩士 === 國立成功大學 === 微電子工程研究所 === 104 === In this thesis, we prepared a solution-processed high-κ barium zirconate titanate as a gate dielectric for pentacene-based organic thin film transistor applications. The performance of the transistor showed a high field-effect mobility of 7.31 cm2/V·s. Furthermore, we utilized Al and spontaneously oxidized Al2O3 as the floating gate and the tunneling layer, respectively. The charge and discharge effects with different gate voltages were discussed by Vt shift. By combining the advantages of high-κ dielectric and floating gate structure, the device effectively reduced the operation voltage and showed good performance of nonvolatile memory characteristic, with a low operation voltage of ±10 V, a large memory window of 4.5 V, and a long retention time of 103 s. We also analyzed mechanism injection by gate current fitting to understand the carrier injection mechanism through the oxide.
author2 Yeong-Her Wang
author_facet Yeong-Her Wang
Ying-WeiTseng
曾穎偉
author Ying-WeiTseng
曾穎偉
spellingShingle Ying-WeiTseng
曾穎偉
Barium Zirconate Titanate Insulators for Organic Nonvolatile Memory Applications
author_sort Ying-WeiTseng
title Barium Zirconate Titanate Insulators for Organic Nonvolatile Memory Applications
title_short Barium Zirconate Titanate Insulators for Organic Nonvolatile Memory Applications
title_full Barium Zirconate Titanate Insulators for Organic Nonvolatile Memory Applications
title_fullStr Barium Zirconate Titanate Insulators for Organic Nonvolatile Memory Applications
title_full_unstemmed Barium Zirconate Titanate Insulators for Organic Nonvolatile Memory Applications
title_sort barium zirconate titanate insulators for organic nonvolatile memory applications
publishDate 2016
url http://ndltd.ncl.edu.tw/handle/20093055496102383956
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