Study of Core-Shell Diode Characteristic with CuInSe2 Nanowire

• Main Authors: Chia-ChunLin, 林嘉峻
• Other Authors: Mau-Phon Houng
• Format: Others
• Language: zh-TW
• Published: 2016
• Online Access: http://ndltd.ncl.edu.tw/handle/2dgu6t

碩士 === 國立成功大學 === 微電子工程研究所 === 104 === CuInSe2 nanowire photovoltaic has been the subject of research with a view to enhancing the photo absorption efficiency and reducing the material consumption compared with bulk and thin-film PV. However, its surface recombination is a problem. Therefore, we use the core-shell structure to solve the problem. In this study, we employ the annealing process and tune the temperature to improve the crystallization of CIS nanowire. In I-V measurement, we obtained leakage current Io near 49.1nA. Then, we fabricated core-shell structure with PEDOT/CIS material to reduce the defects near the surface of nanowire. In I-V measurement, we obtained leakage current Io near 36.9nA.