Research of copper (I) oxide and application of perovskite solar cell

• Main Authors: Chih-YiLin, 林智毅
• Other Authors: J.C.A Huang
• Format: Others
• Language: zh-TW
• Published: 2016
• Online Access: http://ndltd.ncl.edu.tw/handle/19772581744738498880

碩士 === 國立成功大學 === 物理學系 === 104 === In this research, we manufactured Cu2O films by copper target sputtered with Argon mixed Oxygen by Ion Beam Sputter (IBS) system. We analyzed the characteristics of Cu2O by XRD, SEM, PL, XPS…etc. Cu2O is a P-type material, and process a well electrical properties. Base on these properties, we applied Cu2O as a hole transport material to perovskite solar cell. After measuring the power conversion efficiency, the shortcut current density and power conversion efficiency enhanced by approximately 7mA/cm^2 and 2.5% compared with the structure (FTO/TiO2/Perovskite/Spiro-OMeTAD/Cu2O/Ag) and standard structure (FTO/TiO2/Perovskite-/Spiro-OMeTAD/Ag). In addition, we applied Cu2O to manufacture the large-scale devices and P-type Transparent Conducting Oxide (TCO). In this research, the effective area of large-scale device is 2cm^2 and the efficiency is 8.2%. Using Cu2O as p-type TCO to manufacture bifacial device, the light enter the surface of FTO and Cu2O has efficiency 12.04% and 4.94%.