| Summary: | 博士 === 國立成功大學 === 化學工程學系 === 104 === This research is involving of two parts. First part is that Au-assisted growths of InGaN nanowires by VLS growth mechanism at 700℃. GaN nanowires with a mount of planar defects were synthesized as low indium vapor pressure in the gas phase. As the high indium vapor pressure in the gas phase, there are InGaN nanowires with 14% atomic indium and high-intensity wavelength emission at 410 nm grown on Si(100). According to Le Chatelier's Principle, in order to enhance the thermal stability of InN material at the high temperature, the high nitrogen plasma concentration has used. Therefore, the indium content in InGaN nanowires with 460 nm emission light increases to 24% atomic. Other part is the single crystal GaN nanorods grown for Optoelectronic devices. In advance, at 960℃ growth temperature, high-quality Si-doped n-GaN nanorods were synthesized. Cl2-assisted InGaN and p-GaN epitaxial films were respectively grown on n-GaN nanorods at 600℃ to form p-i-n GaN for Optoelectronic structure.
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