延伸式浮動閘極結構氧化鋅薄膜電晶體之 電漿/水溶液離子檢測及應用
碩士 === 國立勤益科技大學 === 電子工程系 === 104 === This study describes a simple and low-temperature annealing solution processing of sol-gel method for depositing zinc-oxide based thin film transistors (ZnO-based TFTs) of semiconductor channel layer. The effect of a plasma power with 18 W followed by low-temper...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/51515484542092125232 |
| Summary: | 碩士 === 國立勤益科技大學 === 電子工程系 === 104 === This study describes a simple and low-temperature annealing solution processing of sol-gel method for depositing zinc-oxide based thin film transistors (ZnO-based TFTs) of semiconductor channel layer. The effect of a plasma power with 18 W followed by low-temperature processing to enhance channel surface in the Ar, N2 and O2 ambience and investigated the detection mechanism of various nonpolar/polar solvents were dropped and adsorbed on the exposed ZnO channel surface.
Final, we propose a new structure of extendable-floating gate ZnO-based TFTs intended for pH sensing application. It has been found that the transfer curve shifts horizontally with different operation voltage. The gate buffer solution plays an important role on its H+ and OH- ion-sensitive properties, which can attributed to the interface between the electrode probe and the extendable electrode structure.
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