Enhanced performance in Pb-Sn-S liquid-junction and Pb-Sb-S solid-state semiconductor-sensitized solar cells

• Main Authors: Sheng-Fong Sie, 謝昇峰
• Other Authors: 李明威
• Format: Others
• Language: zh-TW
• Published: 2016
• Online Access: http://ndltd.ncl.edu.tw/handle/20941158588729242293

碩士 === 國立中興大學 === 奈米科學研究所 === 104 === This study consists of two parts. The first part is about Pb-Sn-S liquid-junction semiconductor-sensitized solar cells, whereas the second part is about enhancing performance of Pb-Sb-S solid-state semiconductor-sensitized solar cells. All of the materials were characterized by X-ray diffraction and transmission electron microscopy and UV-vis spectroscopy. In the first study, Pb-Sn-S was synthesized onto a TiO2 substrate by using a two-step successive ionic layer adsorption reaction deposition (SILAR) method. After a two-stage of SILAR and annealing at 190 ℃for 4 min in N2, Pb-Sn-S quantum dots were formed. The optimal performance of Pb-Sn-S sensitized solar cells was obtained by using Au as counter electrode and a coating of ZnS layer. Under AM 1.5 sunlight illumination (one sun), the power conversion efficiency achieved 2.17 %. Under 10 % reduce sunlight, the efficiency increased to 3.31 %. Finally, the external quantum efficiency (EQE) has the highest value of 67 % atλ= 650 nm. In the second study, the investigation of Pb-Sb-S which has the best efficiency of 4.14 % is continued. Pb-Sb-S was also synthesized onto a TiO2 substrate by using a two-step SILAR method. This study continued to investigate other parameters, i.e. TiO2 and blocking layers thickness. Under one sun, the power conversion efficiency achieved 2.61 %, whereas under 10 % reduced sunlight, the efficiency increased to 5.13 %, obtaining an increase of 24 % over the previous result. In additional, Under 5 % reduced sunlight, the efficiency increased to 6.04 %. Finally, the EQE has the highest value of 78 % atλ= 550 nm.