Performance Improvement of InGaN-based Light Emitting Diodes Fabricated by Patterned Sapphire Substrate Technique and Chemical Lift-Off Process
博士 === 國立中興大學 === 精密工程學系所 === 104 === Gallium nitride (GaN) is a wide bandgap (3.4 eV) semiconductor with wurtzite structure, and it is suitable to apply for high power devices. In this research, in order to improve the crystal quality of GaN epilayer and the light efficiency of GaN-based blue light...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/72771861450586136106 |