Photocurrent distribution and metal contact properties of MoTe2 field effect transistor
碩士 === 國立中興大學 === 物理學系所 === 104 === Using Bias-Dependent Photocurrent to Study the Variation of Schottky Barrier Height in MoTe2/Metal Junctions The Schottky barrier height of the contacts in multilayer MoTe2 thin film field effect transistors (MoTe2 FETs) was studied by the photocurrent var...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/57593404160763727515 |