| Summary: | 碩士 === 國立中興大學 === 材料科學與工程學系所 === 104 === N-type ZnO have been widely studied in the past decade,in recent years, many researchers had interest in researches of P-type ZnO nanowires for the further applications. On the other hand, p-n junction nanowire photosensors can enhance its sensitivity by breakdown bias application because of the avalanche effect.
In this study, phosphorus-doped ZnO nanowires were synthesized by Hydrothermal method with adding NH4H2PO4 in the synthesis solutions. The results show that the diameter and length of ZnO nanowires were both increased with the increasing of the concentration NH4H2PO4.The spacing of (0002) plane of P-doped ZnO nanowires increased by the addition of NH4H2PO4. Also, the slight red shift of UV emission peak in PL spectrum was observed. These P-doped ZnO nanowires have p-type semiconductor characteristic.
The p-n homojunction ZnO nanowires were grown using a two-step synthesis method. The rectifying and liner characteristics of p-n homojunction ZnO nanowires devices were achieved by electric field assembly with DC and AC electric field applications, respectively.Comparing with linear characteristic device, rectify characteristic device has higher sensitivity and shorter reaction time in the reversed bias application.
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