Growth and Characterization of (AlxGa1-x)2O3 Films by Pulsed Laser Deposition
碩士 === 國立中興大學 === 材料科學與工程學系所 === 104 === Recently, to fabricate the deep ultraviolet photodetectors, the use of materials with the shorter cut-off wavelength and the higher transmittance is required. Therefore, the wide-bandgap (AlGa)2O3 (AGO) thin films are worth developing. In this research, the w...
Main Authors: | Shih-Yin Wang, 王詩茵 |
---|---|
Other Authors: | Dong-Sing Wuu |
Format: | Others |
Language: | zh-TW |
Published: |
2016
|
Online Access: | http://ndltd.ncl.edu.tw/handle/49093494455856469989 |
Similar Items
-
Growth Of Epilayers Of GaAs And AlxGa1-x As By MOVPE And Their Characterization
by: Paul, Shashi
Published: (2013) -
Characterization of AlxGa1-xN films grown by metalorgainc chemical vapor deposition
by: Kau-Lung Lin, et al.
Published: (2001) -
Epitaxial growth of (AlxGa1−x)2O3 thin films on sapphire substrates by plasma assisted pulsed laser deposition
by: Zewei Chen, et al.
Published: (2021-03-01) -
Radiation damage assessment in AlxGa1-xAs
by: Allman, D. M.
Published: (1990) -
Ion beam synthesis of AlxGa[1-x]As
by: Kamil, Emad Abbas
Published: (1991)