Preparation of Cu3N thin films by sputter using air as a reactive gas and application evaluation

• Main Authors: Po-Sem Shao, 邵柏森
• Other Authors: Fu-Hsing Lu
• Format: Others
• Language: zh-TW
• Published: 2016
• Online Access: http://ndltd.ncl.edu.tw/handle/43045982424611400766

碩士 === 國立中興大學 === 材料科學與工程學系所 === 104 === In the literature, preparation of Cu3N thin films were prepared by sputtering at high vacuum, which requires to avoid the influence of residual air in the chamber. The high vacuum need more pumping time and more pump, it will make cost up. The objective of this research, using Air/Ar mixed gases to prepare Cu3N thin films by sputtering at low vacuum, which can reduce the pumping time to make cost down. This research using N2 and Air as a reactive gas to prepare Cu3N thin films by sputter. At first the sputtering power was 200 W, the working pressure was 0.3~0.4 Pa, the deposition time was fixed 5 minutes, change N2 and Ar flow to prepare the thin film, and at the same codition, change Air and Ar flow to prepare the thin film. To research the crystal structure, micro structure, resistivity and hardness of Cu3N thin films and assess the application for its thermal decomposition characteristics. The results showed that the reaction to the N2 gas flow at 20 sccm or more the film XRD results was Cu3N, lattice constant was 0.3822 ~ 0.3838, with the thickness of the film of the N2 flow rate through the ratio decreases with increasing resistivity was1.82×10-2 ~ 7.86×103 μΩ-cm, hardness was 3.9 ~ 4.9 GPa; and to the Air as the reaction gas flow rate at 20~30 sccm the film XRD results is Cu3N, with the thickness of the film of the pass into the Air flow ratio reduced increases, the resistivity was 1.58×103 ~ 2.88×103 μΩ-cm, hardness was 3.4 ~ 3.9 GPa. Moreover, the researchers performed a thermodynamic analysis. Results showed that under low-vacuum sputtering conditions, Cu atoms react with the O atoms in the residual gas, forming stable CuO phases. However, the results obtained from the thermodynamic calculations were inconsistent with the findings of the present study. Therefore, the formation of Cu3N by administering N2 and Air into plasma is the product of dynamic control. The researchers then annealed the Cu3N thin films prepared in the present study at 300°C. An analysis on the crystalline phases showed that the characteristic (111) and (200) peaks for Cu3N converted into the characteristic (111) and (200) peaks for Cu. Regarding resistivity, the thin films transitioned from insulators prior to annealing into conductors. A UV-VIS spectral analysis revealed a significant difference in the 800 nm reflectance of the thin films prior to and following annealing. Because Cu3N manifests thermal decomposition characteristics, it can be used as disposable CD material. The thermal decomposition characteristics of the Cu3N prepared in the present study were consistent with those presented in previous studies. Thus, such Cu3N can be used as disposable CD material.