The influence of pulsed plasma on the properties of a-Si:H films
碩士 === 國立中興大學 === 光電工程研究所 === 104 === In this thesis, a 13.56 MHz plasma-enhanced chemical vapor deposition (PECVD) with a pulse modulation RF Power has been used to fabricate hydrogenated amorphous (a-Si:H) silicon thin films. The a-Si:H films are fabricated with fixed chamber pressure, RF power, g...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/55308922014844799567 |