Improvement in Profile and Critical Dimension by Carbon Hard Mask in Metal Etching
碩士 === 國立中興大學 === 光電工程研究所 === 104 === As technology improving, the integrated circuit has scaled into nano-level. However, insufficient photo resist caused by smaller lithography pattern, thinner photo resist and thicker oxide layer in etching process has made plasma etching tricky, such as vague li...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/20066642474463259850 |