Interfacial Reactions of Pure Sn on Ni-coated Anisotropic Bi2Te3 Substrate and Ni Foil

碩士 === 國立中興大學 === 化學工程學系所 === 104 === Thermoelectric (TE) materials are functional semiconductors that have numerous applications for our current society suffering from energy shortage because they can convert heat to electricity. Bismuth telluride (Bi2Te3) is a well-known TE material for its high c...

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Main Authors: Yu-Chen Tseng, 曾宥蓁
Other Authors: 陳志銘
Format: Others
Language:zh-TW
Published: 2016
Online Access:http://ndltd.ncl.edu.tw/handle/05405484261403234368
id ndltd-TW-104NCHU5063079
record_format oai_dc
spelling ndltd-TW-104NCHU50630792017-01-11T04:08:14Z http://ndltd.ncl.edu.tw/handle/05405484261403234368 Interfacial Reactions of Pure Sn on Ni-coated Anisotropic Bi2Te3 Substrate and Ni Foil 純錫與電鍍鎳於異向性碲化鉍基材及鎳箔之界面反應 Yu-Chen Tseng 曾宥蓁 碩士 國立中興大學 化學工程學系所 104 Thermoelectric (TE) materials are functional semiconductors that have numerous applications for our current society suffering from energy shortage because they can convert heat to electricity. Bismuth telluride (Bi2Te3) is a well-known TE material for its high conversion efficiency at room temperature. Much effort has been devoted for improving the figure-of-merit of TE materials, but only few studies exploited the solder joint reactions in TE module which can provide fundamental information for assessing the reliability of packaging process In this research, we utilized zone-melted Bi2Te3 substrates that the bulk p-type and n-type Bi2Te3 substrates was electroplated with a nickel layer as a diffusion barrier layer to join with pure Sn solder in a direction perpendicular or parallel to layer direction of substrate. The results of solid - solid reaction at 200° C show that the morphology and thickness of grown Ni3Sn4 in both directions were similar. However, the Ni layer on n-type Bi2Te3 was quickly consumed because the Ni diffuses into the substrate to form NiTe phase during the long-term aging time. In contrast, the Ni layer on p-type Bi2Te3 was shown as a great diffusion barrier layer. Furthermore, the source of Ni also plays an important role. Ni foil and electroplated Ni shows considerably different results for the interfacial reaction. The preferential orientation of the resulting Ni grains were {0 0 1} and {1 1 1} for electroplated Ni and Ni foil, respectively. The Sn trends to react with Ni foil through diffusion-limited reaction and thus form elongated Ni3Sn4 grains. In contrast, the ripening-limited reaction occurred for electroplated Ni, resulting in large grains. The experimental data from this study show that the electroplated Ni possesses great advantages serve as a diffusion barrier layer. 陳志銘 2016 學位論文 ; thesis 78 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 國立中興大學 === 化學工程學系所 === 104 === Thermoelectric (TE) materials are functional semiconductors that have numerous applications for our current society suffering from energy shortage because they can convert heat to electricity. Bismuth telluride (Bi2Te3) is a well-known TE material for its high conversion efficiency at room temperature. Much effort has been devoted for improving the figure-of-merit of TE materials, but only few studies exploited the solder joint reactions in TE module which can provide fundamental information for assessing the reliability of packaging process In this research, we utilized zone-melted Bi2Te3 substrates that the bulk p-type and n-type Bi2Te3 substrates was electroplated with a nickel layer as a diffusion barrier layer to join with pure Sn solder in a direction perpendicular or parallel to layer direction of substrate. The results of solid - solid reaction at 200° C show that the morphology and thickness of grown Ni3Sn4 in both directions were similar. However, the Ni layer on n-type Bi2Te3 was quickly consumed because the Ni diffuses into the substrate to form NiTe phase during the long-term aging time. In contrast, the Ni layer on p-type Bi2Te3 was shown as a great diffusion barrier layer. Furthermore, the source of Ni also plays an important role. Ni foil and electroplated Ni shows considerably different results for the interfacial reaction. The preferential orientation of the resulting Ni grains were {0 0 1} and {1 1 1} for electroplated Ni and Ni foil, respectively. The Sn trends to react with Ni foil through diffusion-limited reaction and thus form elongated Ni3Sn4 grains. In contrast, the ripening-limited reaction occurred for electroplated Ni, resulting in large grains. The experimental data from this study show that the electroplated Ni possesses great advantages serve as a diffusion barrier layer.
author2 陳志銘
author_facet 陳志銘
Yu-Chen Tseng
曾宥蓁
author Yu-Chen Tseng
曾宥蓁
spellingShingle Yu-Chen Tseng
曾宥蓁
Interfacial Reactions of Pure Sn on Ni-coated Anisotropic Bi2Te3 Substrate and Ni Foil
author_sort Yu-Chen Tseng
title Interfacial Reactions of Pure Sn on Ni-coated Anisotropic Bi2Te3 Substrate and Ni Foil
title_short Interfacial Reactions of Pure Sn on Ni-coated Anisotropic Bi2Te3 Substrate and Ni Foil
title_full Interfacial Reactions of Pure Sn on Ni-coated Anisotropic Bi2Te3 Substrate and Ni Foil
title_fullStr Interfacial Reactions of Pure Sn on Ni-coated Anisotropic Bi2Te3 Substrate and Ni Foil
title_full_unstemmed Interfacial Reactions of Pure Sn on Ni-coated Anisotropic Bi2Te3 Substrate and Ni Foil
title_sort interfacial reactions of pure sn on ni-coated anisotropic bi2te3 substrate and ni foil
publishDate 2016
url http://ndltd.ncl.edu.tw/handle/05405484261403234368
work_keys_str_mv AT yuchentseng interfacialreactionsofpuresnonnicoatedanisotropicbi2te3substrateandnifoil
AT céngyòuzhēn interfacialreactionsofpuresnonnicoatedanisotropicbi2te3substrateandnifoil
AT yuchentseng chúnxīyǔdiàndùnièyúyìxiàngxìngdìhuàbìjīcáijínièbózhījièmiànfǎnyīng
AT céngyòuzhēn chúnxīyǔdiàndùnièyúyìxiàngxìngdìhuàbìjīcáijínièbózhījièmiànfǎnyīng
_version_ 1718407563155865600