Study and Fabrication of Zn2SnO4 Dielectric Thin Films by RF Magnetron Sputter

• Main Authors: Li,Chih-Hung, 李志宏
• Other Authors: Chen,Yung-Yu
• Format: Others
• Language: zh-TW
• Published: 2016
• Online Access: http://ndltd.ncl.edu.tw/handle/37400511605563711547

碩士 === 龍華科技大學 === 電子工程系碩士班 === 104 === Zn2SnO4(ZS) thin films were deposited on p-type Si(100) substrate by RF magnetron sputter in this study. The effects of RF power, working pressure, deposition temperature and annealing temperature on ZS dielectric property and physical property have been evaluated. ZS films were deposited at RF power level of 75 and 125 W, working pressure of 5 mTorr,10 mTorr and 15 mTorr , substrate temperature of 100, 200 and 300 ℃.Subsrquently, the deposited films were post-deposition annealed in N2 atmosphere at 700,800, and 900 ℃ for 60 minutes. A dielectric constant of 210 measured of 1 MHz were obtained for the ZS film deposited at RF power of 125 W, working pressure of 5 mTorr, substrate temperature of 300 ℃.Moreover, leakage current decreased as annealing temperature increased. The annealing, the leakage current is 8.39×10-11 A/cm2 for ZS films deposited at working pressure of 5 mTorr and substrate temperature of 300 ℃, and annealed at 900 ℃ for 60 minutes.