| Summary: | 碩士 === 國立高雄應用科技大學 === 模具系碩士在職專班 === 104 === Aluminum bonding wire is currently used as material for large-current semiconductors such as power devices. Recently, however, increased power density requirements for aerospace, automotive and deep well drilling applications mean that higher junction temperatures are to be encountered in power electronics. Wide band gap semiconductors like SiC and GaN can operate at much higher temperatures and are currently being introduced to applications, such as MOSFETs and IGBTs. There have been demands for development of high heat resistant materials as power devices have higher density, become more compact and have higher output, high purity aluminum bonding wire can contribute to improve heat resistance temperature of packages.
In this study, the main research projects are development of high purity aluminum alloy bonding wire as the power module , this experiment selected 4N aluminum ingot, with iron , copper and other metals to enhance the strength and heat resistance , Al-Fe-Cu alloy ingot through appropriate deployment under , extruded , and other steps can be cold drawn wire diameter 0.378 mm, breaking load ≧ 900g, elongation ≧ 18%, electrical conductivity ≧ 62% IACS, and its composition is Fe: 0.7%, Cu: 0.1-0.2%, Al: bal.
Keywords: semiconductor package, power module, heat-resistant aluminum bonding wire
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