The study on the doping and properties of Cu2O films
碩士 === 義守大學 === 材料科學與工程學系 === 104 === In this experiment, the uprous oxide (Cu2O) films were deposited on corning glass 1737 substrates by RF magnetron sputtering. The doping effects on the properties of Cu2O thin films by various N2 flow ratios (20%~80%), co-doping level of La or Sr ranging from 0...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/m7xkc2 |
| Summary: | 碩士 === 義守大學 === 材料科學與工程學系 === 104 === In this experiment, the uprous oxide (Cu2O) films were deposited on corning glass 1737 substrates by RF magnetron sputtering. The doping effects on the properties of Cu2O thin films by various N2 flow ratios (20%~80%), co-doping level of La or Sr ranging from 0 to 9at% were investigated.
It is found that nitrogen doping can suppress the formation of CuO phase in the Cu2O films and improve the optoelectronic properties of Cu2O:N films.The optimal Cu2O:N film has band gap energy of 2.54 eV, transparency of 43% and resistivity of 112 Ω-cm at N2 ratio of 20%.
The La doped Cu2O films are highly (111) textured. The degree of prefer orientation along (111) is up to 90%. La doping dramatically improve the optical properties of Cu2O films with band gap energy of 3.01 eV and transparency of up to 62%. The Cu2O film has optimal resistivity of 316 Ω-cm, carrier mobility of 13.5 cm2/Vs and carrier concentration of 6.14x1015cm-3 at N2 flow ratio of 20% and La-doping of 3at%.
Sr-doping can effectinely enhance the electrical properties of Cu2O films.The Cu2O film has resistivity of 3.63Ω-cm, carrier mobility of 2.75 cm2/Vs and carrier concentration of 1.09x1018 cm-3 at N2 ratio of 20% and Sr-doping of 9at%. The band gap energy of the Sr doped Cu2O film is determined to be 2.71 eV for the films deposited at N2 ratio of 40% and Sr-doping of 6at%.
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