Investigations on Enhancement-Mode AlGaN/AlN/GaN Heterosturcture Field-Effect Transistors with Different Gate Designs

Investigations on Enhancement-Mode AlGaN/AlN/GaN Heterosturcture Field-Effect Transistors with Different Gate Designs

碩士 === 逢甲大學 === 電子工程學系 === 104 === In this thesis, AlGaN/AlN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) and oxide passivation heterostructure field-effect transistors by using fluorine plasma treatment technique and ozone water treatment technique are designed...

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Bibliographic Details
Main Authors:	Chen Sih Fu, 陳思福
Other Authors:	楊文祿
Format:	Others
Language:	en_US
Published:	2016
Online Access:	http://ndltd.ncl.edu.tw/handle/nmk5ys

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