Investigations on Enhancement-Mode AlGaN/AlN/GaN Heterosturcture Field-Effect Transistors with Different Gate Designs
碩士 === 逢甲大學 === 電子工程學系 === 104 === In this thesis, AlGaN/AlN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) and oxide passivation heterostructure field-effect transistors by using fluorine plasma treatment technique and ozone water treatment technique are designed...
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| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/nmk5ys |