| Summary: | 碩士 === 大葉大學 === 電機工程學系 === 104 === In this study, an optical emission spectrometer (OES) is used to in-situ monitor the variation of plasma radical distribution during the deposition of organic/inorganic silicon thin films by using inductively coupled plasma chemical vapor deposition. For inorganic silicon film deposition, the radiofrequency power is varied from 300-1800 W, and the gas flow ratio of tetramethylsilane (TMS)/oxygen is varied from 10%-50%. The OH* radical (at 309 nm in the OES spectra) is divided by the sum of OH* and CH* (at 431 nm), and it is found that the film will be denser when OH*/(OH*+CH*) is higher. The densest inorganic silicon film is obtained at 1200 W with a OH* ratio of 85%, and the film hardness increases from 4.7 to 7.8 GPa or increases by 40%.
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