| Summary: | 碩士 === 中原大學 === 電子工程研究所 === 104 === Transparent and high electron mobility thin film transistor (TFT) is the key technology for modern displays. The transparency can enhance the brightness of display at lower operated power. The high electron mobility can enhance the switching speed and resolution. Metal oxides, for example zinc oxide (ZnO) can meet those requirements.
In this study, we grow ZnO nanorod array and transform into ZnO nanorod film on sapphire substrate by aqueous solution deposition (ASD). To grow ZnO nanorod array on glass substrate under the same growth conditions, ZnO nanorod array cannot be transformed into ZnO nanorod film due to larger lattice mismatch and the larger gap between ZnO nanorod than those of ZnO nanorod array on sapphire. ZnO nanorod array transformed to ZnO nanorod film on glass substrate is obtained by incorporating with HNO3 solution to increase the size of nanorods and enhance the merge of ZnO nanorods on glass substrate and it exhibits electron Hall mobility of 2 cm2/V-s, is promising to fabricate TFTs.
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