| Summary: | 碩士 === 中原大學 === 電子工程研究所 === 104 === In this study, we grow zinc oxide (ZnO) nanorod array and nanorod film with aputtered ZnO seed layer on sapphire substrates by aqueous solution deposition (ASD) at 50 oC. Characteristics of the ZnO nanorod film will be investigated. The PL analysis of ZnO nanorod film shows the typical emissions of narrow exciton related UV band peak at 376 nm and broad defect related green–yellow (550~650 nm) bands is likely due to oxygen vacancies and the emission is improved after annealing. Inter-digital electrode was evaporated on ZnO nanorod film to fabricate ZnO UV photodetector and measure photorespond. We obtain that the current ratio of photodetector with ZnO nanorod film annealed at 400 oC in N2O is 144.15, the rise time is 2.5 sec, the decay time is 410 sec. We also use Ag for large area electrode to decrease contact resistance, the current ratio is 2538.49, the rise time is 1.5 sec, the decay time is 51.5 sec. We use (NH4)2S to passivate the ZnO film surface. The photorespond decrease because the sulfide left at the interface of ZnO film surface and electrode. We fabricate a Al/ALD-Al2O3/ZnO MOS capacitor and measure the capacitance, the result shows there is a serious interface charge problem.
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