Resistive switching properties and transport mechanism using Cr/BaTiO3/TiN structure
碩士 === 長庚大學 === 電子工程學系 === 104 === Bipolar resistive switching characteristics of the 5 nm-thick and 2.5 nm-thick BaTiO3 films using a Cr/BaTiO3/TiN structure have been reported for the first time. The leakage current increases as well as formation voltage decreases with increasing device size from...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/24edt7 |