| Summary: | 碩士 === 元智大學 === 光電工程學系 === 103 === In this experiment produced under DC magnetron sputtering of indium tin oxide (ITO) doped with molybdenum of the film, wherein the Sn is 0.5wt.%, molybdenum 0.25wt.% (ITO: Mo , ITO: Mo). And thin films produced of indium tin oxide doped with molybdenum target, at a film thickness of 300nm and different film formation conditions (Sputtering power, oxygen content,hydrogencontent, temperature, etc.), for the electrical resistance, optical transmittance, surface morphology, microstructure of the impact. Want to apply on bendable products transparent conductive film.
Experimental results are shown in the sputtering power 100W, argon pressure 2.5mtorr, pass oxygen to8% and the substrate was heated at 100 ℃,optical transmittance and electrical properties are excellent compared to other parameters. In this case the resistivity of 6x10-4Ω-cm, transmittance reaches88%.Grains size about 16nm,Bandgap is 3.9eV.The surface is very smooth, with an average roughness at around 0.7nm.
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