Capping vertically-aligned InGaAs/GaAs(Sb) quantum dots with AlGaAsSb spacer layer for improving the performances of intermediate-band solar cell devices
碩士 === 元智大學 === 光電工程學系 === 103 === This study demonstrated the feasibility of fabricating a highly stacked vertically aligned InGaAs/GaAs(Sb) quantum dot (QD) structure with an AlGaAsSb spacer layer for improving the device performance of QD intermediate-band solar cell (QD-IBSC) devices. The power-...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/w68n7u |