| Summary: | 碩士 === 元智大學 === 光電工程學系 === 103 === In this study, we will research into the etching process of the SF6 plasma on SiNx, including how the changes in the plasma power and the SF6/ O2 flow ratio values,etching rate of the TFT components protective layer, SiNx.Improve on dielectric SiNx taper Structure by using dry etching process
According to the study, when the plasma power increases, the etching rate
goes up, too. If the flow rate of SF6 in the plasma increases, the concentration of the F atoms rise and so in the proportion to its etching rate. If electronegative gases O2 are added into the plasma, it will speed up the Etching rate. However, under different O2/ SF6 flow ratio values, the reactions will be varied and can be divided into two parts:
(1) When the O2/ SF6 flow ratio value is small, O2 can help the dissociation of SF6
and the etching rate is greater than it was when O2 wasn’t added.
(2) When the O2/ SF6 flow ratio value is greater than 1, the etching rate goes down.,
and the formation of rate goes Due to a significant increase in O2, and the
formation of OF resulting from the dissociation of the F atoms colliding with
O2, the concentration of the F atoms lowers down and leads to a lower etching rate.
the best etching rate can be obtained.
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