The study of optoelectronic properties of a-Si:H thin-film solar cells on AAO substrate

• Main Authors: Yu-Teng Chan, 詹宥騰
• Other Authors: Wen-Cheng Ke
• Format: Others
• Language: zh-TW
• Online Access: http://ndltd.ncl.edu.tw/handle/7633b2

碩士 === 元智大學 === 先進能源碩士學位學程 === 103 === This research reports the structural and optoelectronic properties of a-si:H thin-film solar cells that grown on the anodic alumina oxide (AAO) substrate. The hole diameter of AAO substrate are 40.5 and 140.6 nm respectively for the oxalic-AAO and phosphoric-AAO substrate. The a-Si:H thin-film solar cells were grown by the PECVD system. The experimental results indicated that the optoelectronic properties of a-Si:H thin-film solar cells depend on the surface roughness of AAO substrate. The surface roughness (Ra) was 0.314 μm for the oxalic-AAO substrate, which was more smooth than the phosphoric-AAO substrate. The open-circuit voltage Voc = 0.77 V, short-circuit current Jsc = 11.4 mA/cm^, and conversion efficiency η = 5.42 % can be achieved for the a-Si:H thin-film solar cells on the oxalic-AAO substrate. The experimental results indicated that AAO substrate was a potential substrate for the fabrication of the a-Si:H thin-film solar cells module by combing the laser scribing process.